| PART |
Description |
Maker |
| AM82731-006 2884 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM80814-025 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMicroelectronics
SGS Thomson Microelectronics
|
| MS2604 |
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
|
| AM81214-060 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
| AM81214-006 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
| BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor
|
Philips Semiconductors
|
| BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
